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12003 74CBTLV GILFT A5800 12N03 50N03 GSM900D 2N5446
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 BC846,BC847,BC848,BC849,BC850 SERIES
NPN GENERAL PURPOSE TRANSISTORS
VOLTAGE
FEATURES
* General purpose amplifier applications
.007(.20)MIN
30/45/65 Volts
CURRENT
225 mWatts
SOT- 23
Unit: inch (mm)
* NPN epitaxial silicon, planar design * Pb free product are available : 99% Sn above can meet Rohs environment substance directive request
.047(1.20) .056(1.40)
.119(3.00) .110(2.80)
* Collector current IC = 100mA
.103(2.60)
MECHANICAL DATA
Case: SOT-23, Plastic Terminals: Solderable per MIL-STD-202G, Method 208
.083(2.10) .066(1.70)
.006(.15) .002(.05)
.044(1.10)
.006(.15)MAX
D evi e M ar i g: c kn B C 846A =46A B C 846B =46B B C 847A =47A B C 847B =47B B C 847C =47C B C 848A =48A B C 848B =48B B C 848C =48C B C 849B =49B B C 849C =49C B C 850B =50B B C 850C =50C
.020(.50) .013(.35)
ABSOLUTE RATINGS
PARAMETER Collector - Emitter Voltage B C 846 BC847,BC850 BC848,BC849 B C 846 BC847,BC850 BC848,BC849 B C 846 BC847,BC850 BC848,BC849 Symbol VCEO Value 65 45 30 80 50 30 6.0 6.0 5.0 100 Units V
Collector - Base Voltage
VCBO
.035(0.90)
Approx. Weight: 0.008 gram
Emitter - Base Voltage
VEBO
Collector Current - Continuous
IC
THERMAL CHARACTERISTICS
PA R A M E TE R M ax P ow erD i si aton ( ot 1) spi Ne Ther alR esi t nce ,Juncton t A m bi nt m sa io e Juncton Tem per t r i aue S t r ge Tem per t r oa aue S ym bol PTO T RJA TJ
STG TI
Val e u 225 556 - 5 t 150 5o - 5 t 150 5o
U nis t mW
O
.086(2.20)
V
V
mA
C/ W
O
C C
O
Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in.
REV.0-MAR.7.2005
PAGE . 1
BC846,BC847,BC848,BC849,BC850 SERIES
ELECTRICAL CHARACTERISTICS
PA RA M E TE R B C 8 4 6 A /B C o lle c to r - E mi tte r B re a k d o wn Vo lta g e B C 8 4 7 A /B /C ,B C 8 5 0 B /C B C 8 4 8 A /B /C ,B C 8 4 9 B /C C o lle c to r - B a s e B re a k d o wn Vo lta g e B C 8 4 6 A /B B C 8 4 7 A /B /C ,B C 8 5 0 B /C B C 8 4 8 A /B /C ,B C 8 4 9 B /C B C 8 4 6 A /B B C 8 4 7 A /B /C ,B C 8 5 0 B /C B C 8 4 8 A /B /C ,B C 8 4 9 B /C S ym b o l Te s t C o n d i t i o n M IN . 65 45 30 80 50 30 6 .0 6 .0 5 .0 T YP. MA X . U ni t s
V (B R) C E O IC = 1 0 m A , IB = 0
-
-
V
V (B R) C B O IC = 1 0 u A , IE = 0
-
-
V
E mi tte r - B a s e B re a k d o wn Vo lta g e
V (B R) E B O IE = 1 0 u A , IC = 0
-
-
V
E m i t t e r - B a s e C ut o f f C ur r e nt C o l l e c t o r - B a s e C ut o f f C ur r e nt D C C ur r e nt G a i n B C 8 4 6 ~ B C 8 4 8 S uf f i x " A " B C 8 4 6 ~ B C 8 5 0 S uf f i x " B " B C 8 4 7 ~ B C 8 5 0 S uf f i x " C " B C 8 4 6 ~ B C 8 4 8 S uf f i x " A " B C 8 4 6 ~ B C 8 5 0 S uf f i x " B " B C 8 4 7 ~ B C 8 5 0 S uf f i x " C "
IEBO ICBO
V E B =5 V C B = 3 0 V , IE = 0 V C B = 3 0 V , IE = 0 , T J = 1 5 0 O C IC = 1 0 u A , V C E = 5 V
90 150 270 180 290 520 0 .7 0 .9 0 .6 6 0 -
100 15 5 .0 -
nA nA uA -
hF E
-
D C C ur r e nt G a i n
hF E
IC = 2 . 0 m A , V C E = 5 V IC = 1 0 m A , IB = 0 . 5 m A IC = 1 0 0 m A , IB = 5 . 0 m A IC = 1 0 m A , IB = 0 . 5 m A IC = 1 0 0 m A , IB = 5 . 0 m A IC = 2 m A , V C E = 5 . 0 V IC = 1 0 m A , V C E = 5 . 0 V V C B = 1 0 V , IE = 0 , f = 1 M H
11 0 200 420 0 .5 8 -
220 450 800 0 .2 5 0 .6 0 .7 0 0 .7 7 4 .5
-
C o l l e c t o r - E m i t t e r S a t ur a t i o n Vo l t a g e B a s e - E m i t t e r S a t ur a t i o n Vo l t a g e B a s e - E mi tte r Vo lta g e C o l l e c t o r - B a s e C a p a c i t a nc e
V C E (S AT) V C E (S AT) V C E (S AT) C CBO
V V V pF
NPN
REV.0-MAR.7.2005
PAGE . 2
BC846,BC847,BC848,BC849,BC850 SERIES
ELECTRICAL CHARACTERISTICS CURVE (BC846A,BC847A,BC848A)
100 VCB=30V
300
TJ =150 C
ICB0, Collector Current (nA)
250
TJ=100 C
10
hF E
200
150
TJ=25 C
1
100
50
VCE=5V
0 25 50 75 100 125 150 Junction Temperature, TJ (OC)
0 0.01
0.1
1
10
100
1000
Collector Current, IC (mA)
Fig. 1. Typical ICB0 vs. Junction Temperature
1200
Fig. 2. Typical hFE vs. Collector Current
1000
1000 TJ = 25 C 800
VCE(sat) (mV) ,
VBE(ON) (mV) ,
TJ = 100 C
TJ = 100 C TJ = 150 C
600
100
400 VCE=5V 200 TJ = 150 C
TJ = 25 C IC/IB=20
0 0.01
0.1
1
10
100
1000
10 0.01
0.1
1
10
100
1000
Collector Current, IC (mA)
Collector Current, IC (mA)
Fig. 3. Typical VBE(ON) vs. Collector Current
1200
Fig. 4. Typical VCE(SAT) vs. Collector Current
10
TJ = 25 C
1000
TJ = 25 C
Cib (EB)
800
VBE(sat) (mV) ,
TJ = 100 C
600
Capacitance, C (pF)
400
IC/IB=20
Cob (CB)
200
TJ = 150 C
0 0.01
1
0.1 1 10 100
0.1
1
10
100
Collector Current, IC (mA)
Reverse Voltage (V)
Fig. 5. Typical VBE(SAT) vs. Collector Current
Fig. 6. Typical Capacitances vs. Reverse Voltage
REV.0.MAR.7.2005
PAGE . 3
BC846,BC847,BC848,BC849,BC850 SERIES
ELECTRICAL CHARACTERISTICS CURVE (BC846B,BAC847B,BC848B,BC849B,BC850B)
100 VCB=30V
500 450 400
TJ =150 C
VCE=5V
ICB0, Collector Current (nA)
10
hF E
350 300 250 200
TJ=100 C
TJ =25 C
1
150 100 50
0 25 50 75 100
O
125
150
0 0.01
0.1
1
10
100
1000
Junction Temperature, TJ ( C)
Collector Current, IC (mA)
Fig. 1. Typical ICB0 vs. Junction Temperature
1200
1000
Fig. 2. Typical hFE vs. Collector Current
1000 TJ = 25 C TJ = 100 C
VCE(sat) (mV) ,
100 TJ = 100 C TJ = 150 C
800
VBE(ON) (mV) ,
600
400 VCE=5V
TJ = 25 C IC/IB=20
200
TJ = 150 C
0 0.01
0.1
1
10
100
1000
10 0.01
0.1
1
10
100
1000
Collector Current, IC (mA)
Collector Current, IC (mA)
Fig. 3. Typical VBE(ON) vs. Collector Current
1200
Fig. 4. Typical VCE(SAT) vs. Collector Current
10
1000 TJ = 25 C 800 TJ = 100 C
Cib (EB)
TJ = 25 C
600
Capacitance, C (pF)
VBE(sat) (mV) ,
Cob (CB)
400
200
TJ = 150 C
IC/IB=20
0 0.01
1
0.1 1 10 100
0.1
1
10
100
Collector Current, IC (mA)
Reverse Voltage (V)
Fig. 5. Typical VBE(SAT) vs. Collector Current
Fig. 6.
Typical Capacitances vs. Reverse Voltage
REV.0-MAR.7.2005
PAGE . 4
BC846,BC847,BC848,BC849,BC850 SERIES
ELECTRICAL CHARACTERISTICS CURVE (BAC847C,BC848C,BC849C,BC850C)
100 VCB=30V
1200
VCE=5V
ICB0, Collector Current (nA)
1000
TJ =150 C
10
hF E
800
TJ =100 C
600
TJ =25 C
1
400
200
0 25 50 75 100 125 150 Junction Temperature, TJ (OC)
0 0.01
0.1
1
10
100
1000
Collector Current, IC, (mA)
Fig. 1. Typical ICB0 vs. Junction Temperature
1200
1000
Fig. 2. Typical hFE vs. Collector Current
1000
800
TJ = 100 C
TJ = 25 C
VCE(sat) (mV) ,
TJ = 150 C
VBE(ON) (mV) ,
TJ = 100 C 100
600
400
TJ = 25 C
200
TJ = 150 C
VCE=5V
IC/IB=20
0 0.01
0.1
1
10
100
1000
10 0.01
0.1
1
10
100
1000
Collector Current, IC (mA)
Collector Current, IC (mA)
Fig. 3. Typical VBE(ON) vs. Collector Current
1200
Fig. 4. Typical VCE(SAT) vs. Collector Current
10
1000
Cib (EB)
800
TJ = 25 C
VBE(sat) (mV) ,
TJ = 100 C
600
400 IC/IB=20 TJ = 150 C 0 0.01
Capacitance, C (pF)
TJ = 25 C
Cob (CB)
200
1
0.1 1 10 100
0.1
1
10
100
Collector Current, IC (mA)
Reverse Voltage (V)
Fig. 5. Typical VBE(SAT) vs. Collector Current
Fig. 6. Typical Capacitances vs. Reverse Voltage
REV.0-MAR.7.2005
PAGE . 5
BC846,BC847,BC848,BC849,BC850 SERIES
MOUNTING PAD LAYOUT
SOT-23
Unit: inch (mm)
0.035(0.9)
0.031(0.8)
0.037(0.95)
ORDER INFORMATION
* Packing information T/R - 12K per 13" plastic Reel T/R - 3.0K per 7" plastic Reel
LEGAL STATEMENT
IMPORTANT NOTICE This information is intended to unambiguously characterize the product in order to facilitate the customer's evaluation of the device in the application. The information will help the customer's technical experts determine that the device is compatible and interchangeable with similar devices made by other vendors. The information in this data sheet is believed to be reliable and accurate. The specifications and information herein are subject to change without notice. New products and improvements in products and product characterization are constantly in process. Therefore, the factory should be consulted for the most recent information and for any special characteristics not described or specified.
Copyright Pan Jit International Inc. 2003 All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract. The information presented is believed to be accurate and reliable, and may change without notice in advance. No liability will be accepted by the publisher for any consequence of use.Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.
STAD-NOV.17.2004
0.078(2.0)
PAGE . 6


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